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| AP40P03GI Pb Free Plating Product Advanced Power Electronics Corp. Lower On-resistance Simple Drive Requirement Fast Switching Characteristic RoHS Compliant G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 28m[ -30A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The TO-220CFM isolation package is universally preferred for all commercial-industrial through hole applications. D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25J ID@TC=100J IDM PD@TC=25J TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -30 20 -30 -18 -120 31.3 0.25 -55 to 150 -55 to 150 Units V V A A A W W/J J J Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4 62 Units J /W J /W Data and specifications subject to change without notice 200407062-1/4 AP40P03GI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS GB VDSS/G Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -30 -1 - Typ. -0.02 21 15 3 10 10 48 31 66 910 300 210 11 Max. Units 28 50 -3 -1 -25 100 24 1460 17 V V/J m[ m[ V S uA uA nA nC nC nC ns ns ns ns pF pF pF [ Breakdown Voltage Temperature Coefficient Reference to 25J , ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-18A VGS=-4.5V, ID=-10A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150 C) o VDS=VGS, ID=-250uA VDS=-10V, ID=-18A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 20V ID=-18A VDS=-25V VGS=-4.5V VDS=-15V ID=-18A RG=3.3[, VGS=-10V RD=0.8[ VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-18A, VGS=0V IS=-18A, VGS=0V, dI/dt=-100A/s Min. - Typ. 30 25 Max. Units -1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP40P03GI 120 100 -10V 100 -10V TA=150oC 80 T A = 25 o C -7.0V -ID , Drain Current (A) -7.0V -ID , Drain Current (A) 80 60 60 -5.0V -4.5V -5.0V 40 40 -4.5V 20 V G = -3.0 V 20 V G = -3.0 V 0 0 2 4 6 8 0 2 4 6 8 0 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 58 1.6 48 I D = -10 A T C =25 J Normalized RDS(ON) 1.4 I D =- 18 A V G =-10V ) 1.2 RDS(ON) (m[ 38 1.0 28 0.8 18 0.6 2 4 6 8 10 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 18 15 2.0 12 Normalized -VGS(th) (V) -IS(A) 1.5 9 T j =150 C o T j =25 C o 1.0 6 0.5 3 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.0 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP40P03GI f=1.0MHz 12 10000 -VGS , Gate to Source Voltage (V) V DS =- 25 V I D =-1 8 A 9 C (pF) 6 1000 C iss 3 C oss C rss 0 100 0 5 10 15 20 25 30 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100 0.2 0.1 -ID (A) 100us 10 0.1 0.05 1ms T c =25 C Single Pulse o PDM t 0.02 T Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 10ms 100ms 1s DC 10 100 0.01 1 0.1 1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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